BS IEC BRITISHSTANDARD 60747-8-4:2004 Discrete semiconductor devices - Part 8-4: Metal-oxide-semiconductor field-effect transistors (MOSFETs) for power switching applications) ICS 31.080.30 BSi NOCOPYINGWITHOUTBSIPERMISSIONEXCEPTASPERMITTEDBYCOPYRIGHTLAW British Standards BSIEC60747-8-4:2004 National foreword This British Standard reproducesverbatim IEC 60747-8-4:2004 and implements itas theUK national standard. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors,whichhas theresponsibility to: aid enquirers tounderstand thetext; present totheresponsible international/European committeeany enquiries on the interpretation, or proposalsfor change,and keep the UK interests informed; monitor related international and European developments and promulgate them in the UK. A list of organizations represented on this committee can be obtained on request to its secretary. Cross-references The British Standards which implement international publications referred to in this document may befound in the BSI Catalogue under the section entitled "International Standards Correspondence Index", or by using the“Search" facility of the BSI Electronic Catalogue or of British Standards Online. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. Compliance with a British Standard doesnot ofitself conferimmunity fromlegal obligations. Summary of pages This document comprises a front cover, an inside front cover, the IEC title page, pages 2to 61 and a back cover. The BSI copyright notice displayed in this document indicates when the document was last issued. Amendmentsissuedsincepublication This British Standard was Amd. No. Date published under the authority Comments of the Standards Policy and Strategy Committee on 9 November 2004 BSI 9 November 2004 ISBN0580447294 BSIEC60747-8-4:2004 NORME CEI IEC INTERNATIONALE 60747-8-4 INTERNATIONAL STANDARD Premiere édition First edition 2004-09 Dispositifsdiscretsasemiconducteurs Partie 8-4: Transistors a semiconducteurs a oxyde métallique a effet de champ (MOsFET) pour les applications de commutation de puissance Discretesemiconductordevices Part 8-4: Metal-oxide-semiconductorfield-effect transistors(MOSFETs)forpower switching applications IEC Numero de référence Reference number CEI/IEC 60747-8-4:2004 BSIEC60747-8-4:2004 CONTENTS FOREWORD. Scope 2 Normative references 3 Terms and definitions. 3.1 Generalterms 3.2 Equivalent circuit. 3.3 Terms relatedtoratings andcharacteristics 3.4 Conventional used terms. 12 Letter symbols.. 12 4.1 Additional general subscripts.. 12 4.2 List of additional lettersymbols 13 5 Essential ratings and characteristics. 13 5.1 General 5.2 Ratings (limiting values) 13 5.3 Characteristics 15 6 Measuring methods. .17 6.1 General... ..17 6.2 Verificationof ratings (limiting values). .17 6.3 Methods ofmeasurement Acceptanceand reliability(revised from Clause7of IEC60747-8) .56 7.1 Endurance and reliability tests,and test methods .56 7.2 Typetests and routinetests 58 Bibliography.. Figure 1-Equivalent circuit of MOSFET with inverse diode. .8 Figure 2 - Integral times for the turn-on energy Eon and turn-off energy Eoff 9 Figure 3-Basic waveforms to specify the gate charges .. ...11 Figure 4-Circuit diagram for testing of drain-source voltage.. Figure 5-Circuit diagram for testing of gate-source voltage.. ..19 Figure 6 -Circuit diagram for testing of gate-drain voltage. ...20 Figure 7-Circuit diagrams for the measurement of drain off-state current ...21 Figure 8 - Basic circuit for the testing of drain current .. ..22 Figure 9 - Circuit diagram for testing of peak drain current.. ..23 Figure 10-Basic circuit for the testing of reverse drain current of MOSFET Figure 11-Basic circuit for the testing of peak reverse drain current of MOSFETs.. ..25 Figure 12- Circuit diagram for verifying dv/dt.. 26 Figure13-Example of graphical representation (current waveform