IEC IEC62047-25 Edition1.02016-08 INTERNATIONAL STANDARD NORME INTERNATIONALE nside Semiconductordevices-Micro-electromechanicaldevices Part25:SiliconbasedMEMsfabricationtechnology-Measurementmethodof pull-press and shearingstrength of micro bondingarea Dispositifsasemiconducteurs-Dispositifsmicroelectromecaniques Partie25:TechnologiedefabricationdeMEMSabasedesilicium-Methodede mesuredela resistancealatraction-compressionetaucisaillementd'une microzonedebrasure IEC 62047-252016-08(en-fr) THISPUBLICATIONISCOPYRIGHT PROTECTED Copyright2016IEC,Geneva,Switzerland or by any means, electronic or mechanical, including photocopying and microfilm, without permission in writing from either IEC or IEC's member National Committee in the country of the requester. If you have any questions about IEC your local iEC member National Committee for further information. ni utilise sous quelque forme que ce soit et par aucun procede, electronique ou mecanique, y compris la photocopie et les microfilms, sans I'accord crit de IIEC ou du Comite national de I'lEC du pays du demandeur. Si vous avez des questions sur le copyright de riEC ou si vous desirez obtenir des droits supplementaires sur cette publication, utilisez les coordonnées ci-apres ou contactez le Comite national de I'lEC de votre pays de residence. IEC Central Office Tel.: +41 22 919 02 11 3, rue de Varembe Fax: +41 22 919 03 00 CH-1211 Geneva 20
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